Epitaxial devices

ABSTRACT

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

PRIORITY APPLICATION

This application is a continuation of U.S. application Ser. No.14/825,902, filed Aug. 13, 2015, which is a continuation of U.S.application Ser. No. 14/299,742, filed Jun. 9, 2014, issued as U.S. Pat.No. 9,112,104, which is a divisional of U.S. application Ser. No.13/901,767, filed May 24, 2013, now issued as U.S. Pat. No. 8,748,32,which is a continuation of U.S. application Ser. No. 13/528,574, filedJun. 20, 2012, now issued as U.S. Pat. No. 8,450,776, which is adivisional of U.S. application Ser. No. 12/826,275, filed Jun. 29, 2010,now issued as U.S. Pat. No. 8,216,943, all of which are incorporatedherein by reference in their entirety.

BACKGROUND

Many semiconductor devices, in particular Light Emitting Diode (LED)devices, utilize semiconductor materials other than silicon. Thesematerials, such as gallium nitride (GaN), gallium arsenide (GaAs),gallium antimonide (GaSb) etc. can be expensive or even not available ina bulk material form. In order to utilize these materials in a costefficient way, an epitaxial film of the desired semiconductor materialis grown on a suitable substrate. However, growing a high qualityepitaxial film, with low crystal defect density, is typicallyfacilitated by using a substrate with a closely matching latticeconstant.

Presently, sapphire (crystalline aluminum oxide) structures are used assubstrates, but they are expensive, costing up to hundreds of dollarsfor a two inch wafer. It would be economically attractive, and wouldfacilitate circuit integration, to manufacture devices such as LEDs orother semiconductor devices using a less expensive substrate material,such as silicon, to reduce production costs. However, direct epitaxialgrowth of GaN on a silicon surface tends to produce lower qualityepitaxial films with higher defect densities, due to differing latticeconstants.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows two different semiconductor materials according to anembodiment of the invention.

FIG. 2A shows an example block copolymer according to an embodiment ofthe invention.

FIG. 2B shows a portion of a substrate during a manufacturing processaccording to an embodiment of the invention.

FIG. 2C shows a portion of a substrate during a manufacturing processaccording to an embodiment of the invention.

FIG. 2D shows a top view of a substrate during a manufacturing processaccording to an embodiment of the invention.

FIG. 3 shows a flow diagram of an example method according to anembodiment of the invention

FIG. 4 shows an interface between two semiconductor materials accordingto an embodiment of the invention.

FIG. 5 shows another interface between two semiconductor materialsaccording to an embodiment of the invention.

FIG. 6 shows another interface between two semiconductor materialsaccording to an embodiment of the invention.

FIG. 7 shows another interface between two semiconductor materialsaccording to an embodiment of the invention.

FIG. 8 shows a semiconductor device according to an embodiment of theinvention.

FIG. 9 shows another semiconductor device according to an embodiment ofthe invention.

FIG. 10 shows a micrograph of a semiconductor surface according to anembodiment of the invention.

FIG. 11 shows a micrograph of a semiconductor surface according to anembodiment of the invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings that form a part hereof and in whichare shown, by way of illustration, specific embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and chemical, structural,logical, and electrical changes may be made.

The terms wafer and substrate used in the following description includeany structure having an exposed surface with which to form a device orintegrated circuit (IC) structure. The term substrate is understood toinclude semiconductor wafers. The term substrate is also used to referto semiconductor structures during processing, and may include otherstructures, such as silicon-on-insulator (SOI), etc. that have beenfabricated thereupon. Both wafer and substrate include doped and undopedsemiconductors, epitaxial semiconductor structures supported by a basesemiconductor or insulator, as well as other semiconductor structureswell known to one skilled in the art. The term conductor is understoodto include semiconductors, and the term insulator or dielectric isdefined to include any material that is less electrically conductivethan the materials referred to as conductors.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizontal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

FIG. 1 illustrates an example of a silicon lattice 100 and a galliumnitride lattice 110. The silicon lattice 100 includes a regular,crystalline pattern of silicon atoms 102 spaced apart by bonds 104. Thesilicon lattice constant is illustrated as distance 106. The galliumnitride lattice 110 includes both gallium atoms 112 and nitrogen atoms113 with bonds 114 arranged to form the lattice 110. A gallium nitridelattice constant 116 is shown with a smaller lattice constant than thesilicon lattice constant 106. It is desired to have the atoms in thegallium nitride lattice 110 line up with the silicon atoms 102 in thesilicon lattice 100. When the lattice constants are different, the bondstend to distort and create internal stresses in the materials, which canlead to unwanted defects such as dislocations, and can increase thelikelihood of an unwanted fracture plane along the interface.

FIG. 2A illustrates a block copolymer molecule 200 that is used in amethod that improves the interface between a substrate and an epitaxialmaterial to reduce defects and improve strength at the interface. Theblock copolymer molecule 200 includes different polymer chains that areattached together. In its simplest form, as illustrated in FIG. 2A, theblock copolymer includes two different polymer chains, A and B, coupledtogether. One of ordinary skill in the art will recognize that other,more complex block copolymers can also be used within the scope of theinvention. Examples include multiple blocks such as tri-blocks, othermulti-component blocks, branched copolymers, etc.

FIG. 2B illustrates a substrate 201 with an assembled block copolymer210. The block copolymer 210 includes a first “A” region 202 assembledadjacent to the substrate 201 and a second “A” region 204 assembled at adistance away from the substrate 201 and separated from the first “A”region by a “B” region 206. In the example illustrated in FIG. 2B, thesecond “A” region is shown assembled as islands in an array, e.g, eitherspherical micelles or surface-normal cylinders of material “A” within amatrix of material “B.” Other assembly formations include rows, orsimilar energetically favorable configurations that segregate “A”regions apart from “B” regions.

Advantageously, in one example, the block copolymer 210 is aself-assembling coating. The “A” regions 202 arrange themselves apartfrom the “B” regions 206 by themselves when heated or otherwiseactivated. In one example, the substrate 201 is a silicon substrate,although other substrate materials such as germanium, gallium arsenide,etc. are also possible. Silicon substrates are readily available, andare useful to reduce cost of the resulting semiconductor device.

FIG. 2C illustrates the substrate 201, having an added geometric feature210 in the substrate topography. In one example features 211, such asthe sidewall shown in FIG. 2C, are etched into the substrate 201 priorto adding the block copolymer 210. As shown in FIG. 2C, in selectedexamples, the feature 211 is used to direct assembly of the blockcopolymer 210 by providing a guiding surface out of the horizontal planeof the substrate 201.

FIG. 2D illustrates an example of a top view of a self assembled blockcopolymer on a surface of the substrate 201. In the example shown, theblock copolymer regions “A” and “B” are assembled into rows. As notedabove, other examples of assembled patterns include, but are not limitedto arrays of islands or grids.

In one example, block copolymers 210 and their assembled regular patternare used to selectively etch the substrate 201. One example method ofusing block copolymers, as described above, to selectively etch andfurther form an epitaxial material on a substrate surface is shown inFIG. 3.

A block copolymer coating is deposited on a surface of a substrate inoperation 310. In operation 312, the block copolymer coating organizesinto a substantially regular pattern. Process conditions such aselevated temperature, time, a solvent anneal, etc. can be used toorganize the block copolymer.

In operation 314, using polymer chemistry, or adding a dopant to “A” or“B” regions, etc., either the “A” region or the “B” region isselectively removed from the surface of the substrate, and the remainingregion of the block copolymer coating is used as a mask in a subsequentetch process. A resulting textured surface is formed in the substrate.The textured surface corresponds to the regular pattern of the blockcopolymer coating, although it may not be identical. Depending onprocess conditions such as etchant chemistry, etch duration, etc., thetextured surface may include pits, holes, or trenches with verticalsidewalls, angled sidewalls, or other geometries.

In operation 316, an epitaxial material is grown on the textured surfaceof the substrate. In one example specific geometries of the texturedsurface are used to promote high quality epitaxial material growth aswill be discussed in more detail below.

Using block copolymers to mask and etch a substrate surface providesadvantages, in contrast to other techniques such as optical lithography.The added process steps of forming an optical mask and exposing,developing, stripping, etc. of resist materials add cost to themanufacturing process. Using self-assembled block copolymers as an etchmask saves manufacturing steps. In addition, block copolymers areeffective at forming nanometer scale textured surfaces on semiconductorsubstrates, at dimensions smaller than what is attainable withconventional photolithography.

FIG. 4 illustrates one possible mechanism of textured surface geometrypromoting high quality epitaxial material growth. A substrate lattice410 such as silicon, is etched to form a surface texture using selectedblock copolymer methods described above. FIG. 4 illustrates a texturedsurface having a geometry that includes a number of islands 412 and anumber of spaces 414 between the islands. In one example, a periodicity418 of the islands 412 is selected to substantially reduce a latticemismatch between the patterned substrate 410 and an epitaxial material420.

As can be seen in FIG. 4, the atoms in the epitaxial material 420 do notmatch one to one with the atoms in the substrate 410, however theperiodicity 418 helps align atoms at a particular interval to betterreduce a lattice mismatch between the substrate 410 and the epitaxialmaterial 420. Lines 416 shown in FIG. 4 illustrate how the atoms incontact at an interface 402, are substantially aligned. In one example,the periodicity 418 is selected to correspond to approximately +/−25% ofan integer multiple of the lattice constant of the epitaxial material420.

FIG. 5 illustrates another possible mechanism of textured surfacegeometry promoting high quality epitaxial material growth. A number offeatures 502 are etched into a surface of a substrate 510, usingselected block copolymer methods described above. FIG. 5 is shown incross section, so the three dimensional detail of the features 502 isnot shown. Examples of features 502 include pyramids such as four-sidedpyramids, or other numbers of sides, based on crystal structure of thesubstrate 510. Other examples of features 502 include conical shapes,with angled sides as shown. In other examples, the features 502 includerows with a cross section as shown in FIG. 5, the rows having angledsides. The features 502 form an apex 504 with angled surfaces 514extending away from the apex 504. The angle 518 of the angled surfaces514 is illustrated with respect to an average surface plane of thesubstrate 510.

The angled surfaces 514 create a modified lattice spacing 516 whichsubstantially corresponds to a lattice spacing of alternate crystalplanes in the substrate 510. The Figure illustrates how a properlychosen angle 518 results in a spacing 516 that substantially correspondsto a lattice spacing of an epitaxial material 520. The Figure furtherillustrates how a number of epitaxial material portions 520 are formedon angled surfaces of the substrate.

As epitaxial growth progresses, the multiple epitaxial material portions520 will form together and create a substantially homogenous epitaxialmaterial. Using the angled surfaces as shown, the interface between thesubstrate 510 and the epitaxial material includes improved latticematching, and as a result decreases lattice defects in the epitaxialmaterial and improves adhesion at the interface. Although only oneangled surface 514 is shown with epitaxial growth for illustration, oneof ordinary skill in the art will recognize that other angled surfaceswill also include epitaxial growth. Additionally, although atomic scaleis shown in the Figure for illustration, one of ordinary skill in theart will recognize that scale of features 502 and angled surfaces 514 inpractice may be much larger.

FIG. 6 illustrates another example of angled surfaces 614 on a substrate610 with the atomic detail removed. In FIG. 6, one embodiment isillustrated that includes asymmetric angled surfaces with respect toapex 612. For example the surface 614 is shown at a more acute anglethan surface 616, with respect to a horizontal plane of the substrate610.

FIG. 7 illustrates another example of angled surfaces 700 on a substrate710. Similar to the example illustrated in FIG. 5, in FIG. 7, the angledsurfaces are symmetric with respect to apex 712. The surface 714 isshown at a substantially the same angle as surface 716, with respect toa horizontal plane of the substrate 710.

FIG. 8 illustrates an example of a semiconductor device 800 formed usingmethods of patterning and texturing as described above. FIG. 8 shows asemiconductor substrate 810 with an epitaxial material 820 formed overthe substrate 810. An interface 812 is shown between the substrate 810and the epitaxial material 820. In one embodiment, the interface 812 isformed using block copolymer masking, as described above, to form atexture in the substrate. The texture facilitates improved quality andreduction in defects in the epitaxial material 820 as described above.

In one example the substrate 810 includes a silicon substrate. In oneexample the epitaxial material 820 includes a gallium nitride epitaxialmaterial. One particular semiconductor device 800 that can be formedusing methods described in the present disclosure includes an LEDdevice. Gallium nitride is a useful material to form LEDs with selectedwavelengths of light. FIG. 8 illustrates an LED 822 in block diagramform. A P-N junction 824 is illustrated as a functioning component ofthe LED 822. One of ordinary skill in the art, having the benefit of thepresent disclosure will recognize that any of a number of differentgeometries and circuit designs for LED 822 may be possible. The abilityto form high quality epitaxial gallium nitride on silicon increases thequality of the LED semiconductor device 800 and reduces the cost.

FIG. 9 illustrates another example of a semiconductor device 900 formedusing methods of patterning and texturing as described above. FIG. 9shows a semiconductor substrate 910 with a textured surface 912 formedover at least a portion of the substrate 910. A liquid crystal media 914is shown in contact with the textured surface 912 on the substrate 910.Examples of semiconductor devices 900 include liquid crystal displays.Using the cost effective methods of forming a texture on a substrate, asdescribed above, a liquid crystal media performance is enhanced. In oneexample the textured surface facilitates improved organization of theliquid crystal media in response to an applied electric field. In otherexamples, a semiconductor substrate 910 with a textured surface 912 isused as a template in a manufacturing process of a liquid crystaldevice, in contrast to using the semiconductor substrate 910 directlywith a liquid crystal media.

FIG. 10 shows a micrograph of a textured silicon surface formed usingblock copolymer masking as described in various embodiments above.Individual islands are shown having angled surfaces. FIG. 11 showsanother micrograph of a textured silicon surface formed using blockcopolymer masking as described in various embodiments above. Embodimentssuch as shown in FIG. 11 can provide additional mechanical interlockingat an interface with an epitaxially grown material due to the enlargedheads of the islands formed.

While a number of embodiments of the invention are described, the abovelists are not intended to be exhaustive. Although specific embodimentshave been illustrated and described herein, it will be appreciated bythose of ordinary skill in the art that any arrangement that iscalculated to achieve the same purpose may be substituted for thespecific embodiment shown. This application is intended to cover anyadaptations or variations of the present invention. It is to beunderstood that the above description is intended to be illustrative andnot restrictive. Combinations of the above embodiments, and otherembodiments, will be apparent to those of skill in the art upon studyingthe above description.

What is claimed is:
 1. A liquid crystal device, comprising: a semiconductor substrate having a first surface; a number of regularly patterned features formed within a recessed portion in the first surface; and a liquid crystal media located within the recessed portion, and in contact with the regularly patterned features.
 2. The liquid crystal device of claim 1, wherein the number of regularly patterned features includes a number of angled features formed in the first surface, wherein the angled features are angled with respect to a second surface of the substrate that is opposite and substantially parallel to the first surface.
 3. The liquid crystal device of claim 2, wherein the number of angled features includes an array of pyramid shaped features.
 4. The liquid crystal device of claim 2, wherein the number of angled features are asymmetric.
 5. The liquid crystal device of claim 2, wherein the number of regularly patterned features includes a number of linear structures.
 6. The liquid crystal device of claim 5, wherein the number of linear structures are asymmetric.
 7. The liquid crystal device of claim 2, wherein the number of angled features includes an array of conical-shaped structures.
 8. A liquid crystal device, comprising: a semiconductor substrate having a first surface; a number of regularly patterned island features formed within a recessed portion in the first surface; and a liquid crystal media located within the recessed portion, and in contact with the regularly patterned features.
 9. The liquid crystal device of claim 8, wherein the number of regularly patterned island features includes an array of pyramid shaped features.
 10. The liquid crystal device of claim 8, wherein the number of regularly patterned island features includes an array of conical-shaped structures.
 11. The liquid crystal device of claim 8, wherein the semiconductor substrate includes a silicon substrate.
 12. A method comprising: applying a block copolymer to a surface of a first substrate; organizing the block copolymer into a substantially regular pattern; selectively etching the surface of the substrate using the pattern of the organized block copolymer as a mask to form a corresponding textured surface of the substrate, the texture including multiple angled surfaces; forming a liquid crystal region on a second substrate using the textured surface of the first substrate as a template.
 13. The method of claim 12, wherein selectively etching the surface of the substrate includes forming the textured surface to include a number of regularly spaced pyramidal structures.
 14. The method of claim 12, wherein selectively etching the surface of the substrate includes forming the textured surface to include a number of regularly spaced conical-shaped structures.
 15. The method of claim 12, wherein selectively etching the surface of the substrate includes forming the textured surface to include a number of regularly spaced linear structures.
 16. The method of claim 12, wherein applying a block copolymer to the surface of the first substrate includes coating a first surface of a silicon substrate. 